Published January 1992 | Version v1
Journal article

Lattice site changes of ion implanted 8Li in Si studied by alpha emission channeling

  • 1. Fakultaet fuer Physik, Univ. Konstanz (Germany)

Description

The emission channeling technique using position sensitive detection of α-particles was applied to locate the lattice sites of ion-implanted 8Li in high-resistivity p-type Si. Below room temperature mainly tetrahedral and substitutional sites are occupied by the Li atoms. Above room temperature the diffusing Li is captured by defects probably containing oxygen or implantation-induced vacancies. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B
Journal Volume
63
Journal Issue
1/2
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
91-94
ISSN
0168-583X
CODEN
NIMBE

Conference

Title
Symposium B on new materials, physics and technologies for micronic integrated sensors, symposium C on high energy ion implantation, symposium D on ion beam synthesis of compound and element layers and symposium F on nuclear methods in semiconductor physics.
Acronym
Spring meeting of the European Materials Research Society (E-MRS)
Dates
28-31 May 1991.
Place
Strasbourg (France).

Optional Information

Collaborations
ISOLDE Collaboration.