Dislocation analysis of a complex sub-grain boundary in UO2 ceramic using accurate electron channelling contrast imaging in a scanning electron microscope
- 1. Univ Lorraine, CNRS, Arts et Metiers Paris Tech, LEM3, F-57070 Metz (France)
- 2. Michigan State Univ, Chem Engn and Mat Sci, E Lansing, MI 48824 (United States)
- 3. CEA, DEN, DEC, Cadarache, F-13108 St Paul Les Durance (France)
Description
In this work, accurate electron channelling contrast imaging (A-ECCI) assisted by high resolution selected area channelling patterns (HR-SACP) was used to characterize the structure of a complex low sub-grain boundary in a creep deformed uranium dioxide (UO2) ceramic. The dislocations were characterized using TEM-style g.b = 0 and g.b x u = 0 contrast criteria. Misorientations across the boundary were measured using HR-SACPs with 0.04 degrees precision and high accuracy EBSD. The boundary was determined to be asymmetric and mixed in nature, composed of two distinct regions with different dislocation morphologies and a misorientation below 0.5 degrees. The A-ECCI, HR-SACP, and HR-EBSD results are consistent, confirming A-ECCI as a powerful tool for characterizing even complex dislocations structures using scanning electron microscopy. This is particularly true for UO2, since this material is very difficult to thin, which makes TEM examination of sub-boundaries over the scale of several micrometers difficult. Furthermore, in this study, the change in dislocations arrangement along the breath of the complex low angle sub-grain boundary is related to the misorientation across the boundary. (authors)
Availability note (English)
Available from doi: http://dx.doi.org/10.1016/j.ceramint.2019.06.091Additional details
Identifiers
Publishing Information
- Journal Title
- Ceramics International
- Journal Volume
- 45
- Journal Issue
- no.15
- Journal Page Range
- p. 18666-18671
- ISSN
- 0272-8842
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- France
- INIS RN
- 53055259
- Subject category
- S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ACCURACY; ASYMMETRY; BACKSCATTERING; CERAMICS; DISLOCATIONS; ELECTRON DIFFRACTION; ELECTRONS; GRAIN BOUNDARIES; MORPHOLOGY; RESOLUTION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; URANIUM DIOXIDE
- Descriptors DEC
- ACTINIDE COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; LINE DEFECTS; MICROSCOPY; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; SCATTERING; URANIUM COMPOUNDS; URANIUM OXIDES