Behavior of Electrochemically Prepared CuInSe2 as Photovoltaic Absorber in thin Film Solar Cells

Two different objectives have been pursued in the present investigation: 1) optimization of the CuInSe, preparation parameters from electrodeposited precursors, and 2) evaluation of their photovoltaic behavior by preparing and enhancing Mo/CuInSe,/CdS/TCO devices. When Cu-In-Se precursors are directly electrodeposited, the applied potential fit is essential to improve the photovoltaic performance. Suitable absorbers have been also obtained by evaporating an In layer onto electrodeposited Cu-Se precursors. In this case, the substrate temperature during evaporation determines the CuInSe, quality. Similar results have been reached by substituting typical Mo-coated glass substrates by flexible Mo foils. Different TCO tested (ZnO and ITO) have been found equivalent as front electrical contact in the devices. Solar cell performance can be improved by annealing in air at 200 degree centigree. (Author) 46 refs