Published 2005 | Version v1
Miscellaneous Open

Effects of the addition of H2O and NH4OH in the electrical properties of thin films of Y2O3 deposited by pyrolytic spray

Creators

  • 1. CICATA-IPN, Legaria 694, Col. Irrigacion, 11500 Mexico D.F. (Mexico)
  • 2. CINVESTAV-IPN, 07000 Mexico D.F. (Mexico)
  • 3. IIM-UNAM, A.P. 70-360, 04510 Mexico D.F. (Mexico)
  • 4. UAZ, 98060 Zacatecas (Mexico)

Description

In this work we studied the electrical properties of yttrium oxide thin films obtained by spray pyrolysis from Y(acac)3 and N,N-DMF. The films were deposited on Si(100) substrates at temperatures of 400, 450, 500 and 550 C. The electrical characteristic of the films was improved when a mist of H2O and/or NH40H was simultaneously added to the deposition system. Current and capacitance versus voltage measurements were obtained when the Y2O3 films were integrated in MOS (Metal-Oxide-Semiconductor) structures. Y2O3 films with a dielectric constant up to 15 were obtained. The films can stand electric fields up to 2 MV/cm. An interface state density in the range of 1010-1011 cm-2 eV-1 was measured at midgap from the high and low frequency capacitance measurements. (Author)

Availability note (English)

Available from INIS in electronic form

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Additional details

Additional titles

Original title (Spanish)
Efectos de la adicion de H

Publishing Information

Imprint Pagination
7 p.
Report number
INIS-MX--1905

Conference

Title
8. International Conference; 18. National Congress on Solid State Dosimetry
Dates
7-9 Sep 2005
Place
Zacatecas (Mexico)

INIS

Country of Publication
Mexico
Country of Input or Organization
Mexico
INIS RN
36105113
Subject category
S61: RADIATION PROTECTION AND DOSIMETRY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
AMMONIUM HYDROXIDES; CAPACITANCE; CONCENTRATION RATIO; DIAGRAMS; DIELECTRIC PROPERTIES; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; PYROLYSIS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SPRAYS; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; WATER; YTTRIUM OXIDES
Descriptors DEC
AMMONIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; DATA; DECOMPOSITION; ELECTRICAL PROPERTIES; FILMS; HYDROGEN COMPOUNDS; HYDROXIDES; INFORMATION; MATERIALS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; THERMOCHEMICAL PROCESSES; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS