Analysis of the lattice diffusion-controlled growth of metallic whiskers
Creators
- 1. Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506 (United States)
Description
Whisker growth plays an important role in determining the performance and lifetime of micro/nano electronic devices. In this work, we analyse the contribution of lattice diffusion to the whisker growth in a bilayer structure. An analytical solution of the growth rate is obtained as a function of the average chemical stress and the whisker size. The growth rate is inversely proportional to the whisker size for the growth of a whisker over a semi-infinite crystal, while it is proportional to the thickness of the surface layer for larger ratio of the whisker size to the thickness of the surface layer. The analytical result provides us a rational basis to evaluate the growth behaviour of metallic whiskers and nanowires controlled by the lattice diffusion
Additional details
Identifiers
- DOI
- 10.1088/0022-3727/40/13/019;
- PII
- S0022-3727(07)36303-1;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 40
- Journal Issue
- 13
- Journal Page Range
- p. 4034-4038
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38085781
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANALYTICAL SOLUTION; CRYSTAL GROWTH; DIFFUSION; ELECTRONIC EQUIPMENT; LAYERS; LIFETIME; PERFORMANCE; QUANTUM WIRES; THICKNESS; WHISKERS
- Descriptors DEC
- CRYSTALS; DIMENSIONS; EQUIPMENT; MATHEMATICAL SOLUTIONS; MONOCRYSTALS; NANOSTRUCTURES