Certain properties of silicon alloyed with gadolinium

Some properties of silicium crystals doped with gadolinium during the growing process with the Chohralskij method are studied. Mass-spectrometric and radioactivation analysis are carried out. The magnetic susceptibility, the Hall effect and the electrical conductivity are studied at 78-3000K. ESR is measured at 4.2 K, and the distribution of carrier lifetimes is determined from the stationary photoconductivity. Curves for the distribution of gadolinium concentration as a function of the depth and for the temperature dependence of the magnetic susceptibility of silicium doped with gadolinium are presented. From the experimental data it can be concluded that Gd in concentrations greater than or approximately equal to 1018cm-3 forms clusters in silicium of such size that the temperature of the ferromagnetic transition of gadolinium is not changed