Transport through a Single Barrier on Monolayer MoS2
Creators
- 1. Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004 (China)
- 2. College of Mechanical and Electrical Engineering, Anhui Polytechnic University, Wuhu 241000 (China)
Description
We investigate theoretically quantum transport through a single barrier on monolayer MoS2. It is found that the transmission properties of spin-up (down) electrons in the K valley are the same as spin-down (up) electrons in the K′ valley due to the time-reversal symmetry. Generally, the transmission probability for transport through an n–n–n (or p–p–p) junction is an oscillating function of incident angle, barrier height, as well as the incident energy of electrons. The present transmission shows a directional-dependent tunneling depending sensitively on the spin orientation for transport through a p–p–p junction. While for transport through an n–p–n junction, monolayers of MoS2 become opaque for almost all angles of incident θ0 except for θ0 ∼ θ0m (the resonant angles). The positions and numbers of resonant peaks in the transmission are determined by the distance between the two barriers and the spin orientation. The conductance in such systems can be tuned significantly by changing the height of the electric potential. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/32/10/107301Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 32
- Journal Issue
- 10
- Journal Page Range
- [4 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48018994
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC POTENTIAL; MOLYBDENUM SULFIDES; P-N JUNCTIONS; PROBABILITY; SILICON OXIDES; SPIN; SPIN ORIENTATION; SYMMETRY; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; MOLYBDENUM COMPOUNDS; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS