Published April 2018 | Version v1
Journal article

Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range

  • 1. Institute for Physics of Microstructures of Russian Academy of Science (Russian Federation)
  • 2. Siberian Branch of Russian Academy of Sciences, A. V. Rzhanov Institute of Semiconductor Physics (Russian Federation)
  • 3. LNCMI-CNRS-UGA-UPS-INSA-EMFL, Laboratoire National des Champs Magnétiques Intenses (France)
  • 4. Université Montpellier, UMR CNRS 5221, GIS-TERALAB (France)

Description

We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
52
Journal Issue
4
Journal Page Range
p. 436-441
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49100997
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DIELECTRIC MATERIALS; MERCURY TELLURIDES; OPTICAL PUMPING; QUANTUM WELLS; STIMULATED EMISSION; WAVELENGTHS
Descriptors DEC
CHALCOGENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; MATERIALS; MERCURY COMPOUNDS; NANOSTRUCTURES; PUMPING; TELLURIDES; TELLURIUM COMPOUNDS

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Copyright
Copyright (c) 2018 Pleiades Publishing, Ltd.