Published January 2011
| Version v1
Journal article
Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
Creators
- 1. Lobachevsky State University, Research Physicotechnical Institute (Russian Federation)
- 2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- 3. Lobachevsky State University (Russian Federation)
Description
The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400–800°C and annealed in hydrogen atmosphere at a temperature of 800°C for 30 min. The possible nature of the donor centers is discussed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 1
- Journal Page Range
- p. 130-133
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094989
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- IMPURITIES; LAYERS; MOLECULAR BEAM EPITAXY; SUBLIMATION; TEMPERATURE RANGE
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EPITAXY; EVAPORATION; PHASE TRANSFORMATIONS
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.