Published April 15, 1978 | Version v1
Journal article Metadata-only

Effects of ion implantation on the structure of amorphous germanium

Creators

  • 1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

Description

We have investigated the structure of amorphous Ge films with 10-keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion-implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network

Additional details

Identifiers

DOI
10.1063/1.90110;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
32
Journal Issue
8
Series
Appl. Phys. Lett.
Journal Page Range
466-468
ISSN
0003-6951

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
9397991
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; FILMS; GERMANIUM; GERMANIUM IONS; ION IMPLANTATION; KEV RANGE 01-10; MICROSTRUCTURE; PHYSICAL RADIATION EFFECTS; VACANCIES
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; METALS; MICROSCOPY; POINT DEFECTS; RADIATION EFFECTS; SCATTERING

Optional Information

Notes
Updated automatically by Metadata and Full-Text Enrichment Agent