Published September 2011 | Version v1
Journal article Metadata-only

Effect of interface defect states on photoelectric properties of InxGa1-xAs/GaAs heterostructures with quantum dots

Creators

  • 1. Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)
  • 2. Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville (United States)

Description

Properties of the lateral photocurrent in InxGa1-xAs/GaAs heterostructures with quantum dot (QD) chains at various indium concentrations x are investigated. Analyzing the data on thermostimulated conduction (TSC) after the excitation by optical radiation in the region of QD absorption, the following energy levels of defect states with respect to the GaAs conduction band were found: 0.11 eV, 0.16 eV, 0.21 eV, 0.24 eV, and 0.35 eV. Investigations of the lateral photoconduction (LPC) made it possible to discover transitions involving the levels of electron traps of EL2 and EB3 GaAs intrinsic defects.

Additional details

Additional titles

Original title (Ukrainian)
Vpliv defektnikh stanyiv yinterfejsu na foroelektrichnyi vlastivostyi geterostruktur In

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (Kyiv)
Journal Volume
56
Journal Issue
no.9
Journal Page Range
p. 944-952
ISSN
0372-400X

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
43128716
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ABSORPTION; CONCENTRATION RATIO; EXCITATION; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INTERFACES; NANOSTRUCTURES; PHOTOCONDUCTIVITY; QUANTUM DOTS; SPECTRA; ZONES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONLESS NUMBERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SORPTION