Published December 30, 2012 | Version v1
Journal article

Preparation and atomic oxygen erosion resistance of silica films formed on polymethyl methacrylate by solvothermal method

  • 1. College of Chemistry and Chemical Engineering, Yantai University, Yantai 264005 (China)
  • 2. National Key Lab. of Vacuum and Cryogenics Technology and Physics, Lanzhou Institute of Physics, Lanzhou 730000 (China)

Description

Silica films were prepared on the surface of polymethyl methacrylate (PMMA) via sol solution and solvothermal treatment, after modifying the surface of PMMA by solvothermal method. The samples were irradiated by atomic oxygen in a ground-based simulation system. The surface morphology and structure of silica films were investigated by atomic force microscopy, scanning electronic microscopy and attenuated total reflectance-Fourier transformed infrared spectroscopy. In addition, dry and wet thermal cycling tests were performed to investigate the adhesion behavior of silica films on PMMA. The results indicated that a uniform film was easily formed on the surface of PMMA. After atomic oxygen exposure, the silica film becomes more compact, without peeling off, and has good optical transparency. - Highlights: ► The surface of polymethyl methacrylate (PMMA) was modified by solvothermal method. ► The interfacial combination between the silica film and PMMA was improved. ► Silica film can improve the atomic oxygen resistance of PMMA. ► The sample still retained good light transmission after atomic oxygen exposure.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2012.11.032

Additional details

Identifiers

DOI
10.1016/j.tsf.2012.11.032;
PII
S0040-6090(12)01513-1;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
526
Journal Page Range
p. 109-115
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.