Published January 1, 2011
| Version v1
Journal article
Particle pulse shape discrimination on a silicon surface barrier detector irradiated with 14 MeV neutrons
- 1. Science and Technology on Nuclear Data Laboratory, China Institute of Atomic Energy, Beijing 102413 (China)
- 2. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 10087 (China)
Description
Based on two kinds of zero-crossing electronic setups, the particle pulse shape discrimination (PSD) test of a silicon surface barrier (SSB) detector, which was irradiated with 14 MeV neutrons from a d-T reaction, was performed. Good separation between alphas and protons has been achieved. Discrimination thresholds were estimated to be about 3 MeV. The result is comparable with the previous reports, as well as the dynamic range of the two methods discussed in this paper. This work is helpful to use SSB detectors for measuring mixed charged particles spectra induced by neutrons or charged particles.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2010.10.043Additional details
Identifiers
- DOI
- 10.1016/j.nima.2010.10.043;
- PII
- S0168-9002(10)02282-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 625
- Journal Issue
- 1
- Journal Page Range
- p. 35-38
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42075007
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGED PARTICLES; MEV RANGE 10-100; NEUTRONS; PHYSICAL RADIATION EFFECTS; PROTONS; PULSE SHAPERS; SI SEMICONDUCTOR DETECTORS; SPECTRA; SURFACE BARRIER DETECTORS; SURFACES
- Descriptors DEC
- BARYONS; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; MEASURING INSTRUMENTS; MEV RANGE; NUCLEONS; PULSE CIRCUITS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SIGNAL CONDITIONERS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.