Published September 2003 | Version v1
Journal article

Effective collision strengths for electron impact excitation of Si VIII

Description

Effective collision strengths for electron-impact excitation of the nitrogen-like ion Si VIII are presented over the wide range of electron temperatures logT(K)=4.0-6.5. All 231 fine-structure transitions among the 22 fine-structure levels arising from the lowest 11 LS target states (2s22p3, 2s2p4, 2p5, and 2s22p23s) are considered in the tabulation. The collision strengths are evaluated in a multi-channel R-matrix approach, and the corresponding effective collision strengths are obtained by averaging these over a Maxwellian distribution of electron velocities. Comparisons are made with recent distorted-wave results at high incident electron energies. Differences of up to 20% are found, particularly for some allowed transitions

Additional details

Identifiers

DOI
10.1016/S0092-640X(03)00055-X;
arXiv
arXiv:math/0205211v1;
PII
S0092640X0300055X;

Publishing Information

Journal Title
Atomic Data and Nuclear Data Tables
Journal Volume
85
Journal Issue
1
Journal Page Range
p. 69-82
ISSN
0092-640X
CODEN
ADNDAT

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35037918
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
BOLTZMANN STATISTICS; DISTORTED WAVE THEORY; ELECTRON COLLISIONS; ELECTRON TEMPERATURE; EXCITATION; FINE STRUCTURE; P STATES; S STATES; SILICON IONS
Descriptors DEC
CHARGED PARTICLES; COLLISIONS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; IONS

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.