Published September 2003
| Version v1
Journal article
Effective collision strengths for electron impact excitation of Si VIII
Description
Effective collision strengths for electron-impact excitation of the nitrogen-like ion Si VIII are presented over the wide range of electron temperatures logT(K)=4.0-6.5. All 231 fine-structure transitions among the 22 fine-structure levels arising from the lowest 11 LS target states (2s22p3, 2s2p4, 2p5, and 2s22p23s) are considered in the tabulation. The collision strengths are evaluated in a multi-channel R-matrix approach, and the corresponding effective collision strengths are obtained by averaging these over a Maxwellian distribution of electron velocities. Comparisons are made with recent distorted-wave results at high incident electron energies. Differences of up to 20% are found, particularly for some allowed transitions
Additional details
Identifiers
- DOI
- 10.1016/S0092-640X(03)00055-X;
- arXiv
- arXiv:math/0205211v1;
- PII
- S0092640X0300055X;
Publishing Information
- Journal Title
- Atomic Data and Nuclear Data Tables
- Journal Volume
- 85
- Journal Issue
- 1
- Journal Page Range
- p. 69-82
- ISSN
- 0092-640X
- CODEN
- ADNDAT
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037918
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- BOLTZMANN STATISTICS; DISTORTED WAVE THEORY; ELECTRON COLLISIONS; ELECTRON TEMPERATURE; EXCITATION; FINE STRUCTURE; P STATES; S STATES; SILICON IONS
- Descriptors DEC
- CHARGED PARTICLES; COLLISIONS; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; IONS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.