Published December 2010
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Momentum dependence of the topological susceptibility with overlap fermions
Creators
- 1. Numazu College of Technology, Shizuoka (Japan)
- 2. Humboldt Univ., Berlin (Germany). Inst. fuer Physik
- 3. Muenchen Univ. (Germany). Fakultaet fuer Physik
- 4. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
- 5. Regensburg Univ. (Germany). Inst. fuer Theoretische Physik
- 6. Bayerische Akademie der Wissenschaften, Garching (Germany). Leibniz-Rechenzentrum
Description
Knowledge of the derivative of the topological susceptibility at zero momentum is important for assessing the validity of the Witten-Veneziano formula for the η' mass, and likewise for the resolution of the EMC proton spin problem. We investigate the momentum dependence of the topological susceptibility and its derivative at zero momentum using overlap fermions in quenched lattice QCD simulations. We expose the role of the low-lying Dirac eigenmodes for the topological charge density, and find a negative value for the derivative. While the sign of the derivative is consistent with the QCD sum rule for pure Yang-Mills theory, the absolute value is overestimated if the contribution from higher eigenmodes is ignored. (orig.)
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Additional details
Publishing Information
- Imprint Pagination
- 7 p.
- ISSN
- 0418-9833
- Report number
- DESY--10-207
Conference
- Title
- 28. international symposium on lattice field theory
- Acronym
- Lattice 2010
- Dates
- 14-19 Jun 2010
- Place
- Villasimius (Italy)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 42011234
- Subject category
- S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COMPUTERIZED SIMULATION; DIFFERENTIAL CALCULUS; DIRAC OPERATORS; EIGENSTATES; LATTICE FIELD THEORY; QUANTUM CHROMODYNAMICS; QUARKS
- Descriptors DEC
- CONSTRUCTIVE FIELD THEORY; FERMIONS; FIELD THEORIES; MATHEMATICAL OPERATORS; MATHEMATICS; QUANTUM FIELD THEORY; QUANTUM OPERATORS; SIMULATION
Optional Information
- Secondary number(s)
- HU-EP--10-63