Published December 2007 | Version v1
Journal article

Properties of CVD diamond film detector

  • 1. Department of Engineering Physics, Tsinghua Univ., Beijing (China)
  • 2. Northwest Inst. of Nuclear Technology, Xi'an (China)
  • 3. Materials College, Univ. of Science and Technology Beijing, Beijing (China)
  • 4. Xi'an Jiaotong Univ., Xi'an (China)

Description

The dark current, charge collection efficiency and time response properties of CVD diamond film detectors are studied based on experiments and their theoretical analysis. The results shows: No PN or PIN junctions are needed when preparing diamond detectors; charge collection efficiency of the detector will be reduced by defects in film, and it increases and reaches saturation along with the increasing electric field between the two electrodes. The charge collection time of our diamond film detector is about 719ps, and the charge collection efficiency can reach the saturation value of 60.5% under the electric field of 2.5 V/μm. Scattering of the lattice may slow the detector response, so it's necessary to improve CVD technology and choose diamond film with big grain size. (authors)

Additional details

Publishing Information

Journal Title
High Energy Physics and Nuclear Physics
Journal Volume
31
Journal Issue
12
Journal Page Range
p. 1112-1115
ISSN
0254-3052

Optional Information

Notes
6 figs., 14 refs.