Published October 16, 1982
| Version v1
Journal article
Study of imperfections in Ge-Te semiconductors by the positron annihilation technique
- 1. AN SSSR, Moscow. Inst. Khimicheskoj Fiziki
Description
The nature of defects in crystal and glass phases and in transition ranges for the system Ge-Te is studied by the positron annihilation technique. Additional evidence of positronium formation in semiconductors is obtained. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 73
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 321-324
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14734665
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ANNIHILATION; CRYSTAL DEFECTS; CRYSTAL-PHASE TRANSFORMATIONS; GERMANIUM ALLOYS; GERMANIUM TELLURIDES; LIFETIME; POSITRONIUM; POSITRONS; QUANTITY RATIO; SEMICONDUCTOR MATERIALS; TELLURIUM ALLOYS
- Descriptors DEC
- ALLOYS; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHALCOGENIDES; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; GERMANIUM COMPOUNDS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; MATERIALS; MATTER; PARTICLE INTERACTIONS; PHASE TRANSFORMATIONS; TELLURIDES; TELLURIUM COMPOUNDS