Published 1974
| Version v1
Report
Depth distribution of absorbed energy, defects, interstitial atoms in Si and SiO2, irradiated with 100 mev protons
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Распределение по глубине поглощенной энергии, дефектов, внедренных атомов в Си и SiO
Publishing Information
- Imprint Title
- Abstracts of papers presented at the 5. all-union coordination meeting on dosimetry of ionizing radiation intensive beams
- Imprint Pagination
- p. 23.
- Report number
- INIS-mf--3249
Conference
- Title
- 5. all-union coordination meeting on dosimetry of ionizing radiation intensive beams.
- Dates
- 25 Nov 1974.
- Place
- Moscow, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 8281035
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ENERGY DEPENDENCE; ENERGY LOSSES; ENERGY SPECTRA; INTERSTITIALS; IRRADIATION; MEV RANGE 10-100; MONTE CARLO METHOD; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON; SILICON OXIDES; SPATIAL DISTRIBUTION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; ENERGY RANGE; MEV RANGE; NUCLEON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA
Optional Information
- Notes
- 3 refs.; published in summary form only. Imprint:Tezisy dokladov 5 Vsesoyuznogo koordinatsionnogo soveshchaniya po dozimetrii intensivnykh potokov ioniziruyushchikh izluchenij.