Photoluminesence study of undoped GaAs at temperatures 300 K and 77 K

This work presents an experimental study of photoluminescence spectra from GaAs thin layer at temperature 300 K and 77 K. PL spectra were used to investigate the characteristics of the material, such as the photon energy, gap energy, and the type of radiation transition. The apparatus used in the experiment are green laser with a wavelength of 532.0 nm, laser power supply, 500 mm focus lens, ocean optics USB 2000 spectrometer, fiber optic cable, USB cable, and the computer software installed ocean view and origin pro. The characterization was carried out at temperatures of 300 K and 77 K with power variation in the range 40 mW - 150 mW. The emitted spectrum was analyzed by observing the wavelength and calculating the photon energy and the gap energy. The results showed that laser power variation does not affect the emitted wavelength. However, it is affected by temperature. The emitted wavelength is 840 nm at 300 K and 790 nm at 77 K. The value of gap energy at 300 K is 1.422 eV while at temperature 77 K is 1.519 eV. The photon energy at temperatures 300 K and 77 K were 1.465 eV and 1.560 eV, respectively. The type of transition is a band-to-band transition at 300 K and Free Exciton (FE) at 77K. These results are consistent with existing theories, so the characterization of undoped GaAs has done successfully. (paper)