Published February 2010 | Version v1
Journal article

Insights into single semiconductor nanowire heterostructures using time-resolved photoluminescence

  • 1. Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States)
  • 2. Department of Physics, Miami University, Oxford, OH 45056 (United States)
  • 3. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

Description

We review a number of time-resolved photoluminescence experiments which have provided new understanding of the physical properties of single nanowires and single semiconductor nanowire heterostructures. Specifically, TRPL spectroscopy has been used to understand more fully non-radiative surface and bulk defects, radiative defects in CdS, InP and GaAs nanowires, core-shell effects, polytypism in InP nanowires, many body effects in GaAs and InP nanowires, and type-II band alignments in ZB/WZ mixed phase nanowires

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/25/2/024010

Additional details

Identifiers

DOI
10.1088/0268-1242/25/2/024010;
PII
S0268-1242(10)22749-9;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
25
Journal Issue
2
Journal Page Range
[13 p.]
ISSN
0268-1242
CODEN
SSTEET