Published March 18, 2014 | Version v1
Journal article Metadata-only

THz photoluminescence from n-GaN layers at CW interband excitation

Creators

  • 1. A. F. Ioffe Physical Technical Institute, 194021, St. Petersburg (Russian Federation)
  • 2. Institute of Material Research and Engineering, 119260 (Singapore)

Description

We report on experimental observation and studies of terahertz emission from n-doped GaN films under continuous wave interband photoexcitation at low temperatures. Properties of the terahertz emission testify that the emission is caused by intracenter optical transitions in shallow donors of GaN. The THz intracenter optical transitions are initiated by the interband photoexcitation

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/486/1/012033

Additional details

Identifiers

DOI
10.1088/1742-6596/486/1/012033;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
486
Journal Issue
1
Journal Page Range
[2 p.]
ISSN
1742-6596

Conference

Title
2. Russia-Japan-USA symposium on the fundamental and applied problems of terahertz devices and technologies
Acronym
RJUS TeraTech - 2013
Dates
3-6 Jun 2013
Place
Moscow (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46073664
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DOPED MATERIALS; EXCITATION; FILMS; GALLIUM NITRIDES; LAYERS; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; THZ RANGE
Descriptors DEC
EMISSION; ENERGY-LEVEL TRANSITIONS; FREQUENCY RANGE; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR MATERIALS