Published 1990 | Version v1
Miscellaneous Metadata-only

Intrinsic bistability in resonant tunneling structures

Creators

  • 1. Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche

Description

The current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure was calculated in the effective mass approximation. This calculation includes the effect of electron-electron interaction in a self-consistent way. It is demonstrated that charge accumulation in the quantum well is large enough to produce a bistability in the negative differential resistance region of the current-voltage curve. (Author)

Availability note (English)

Available from Comision Nacional de Energia Atomica, Buenos Aires (AR). Library.

Additional details

Publishing Information

Imprint Pagination
15 p.

INIS

Country of Publication
Argentina
Country of Input or Organization
Argentina
INIS RN
22035625
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
BUILDUP; ELECTRIC CONDUCTIVITY; ELECTRON-ELECTRON INTERACTIONS; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; SEMICONDUCTOR DEVICES; SUPERLATTICES; TUNNEL EFFECT
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INTERACTIONS; LEPTON-LEPTON INTERACTIONS; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; PNICTIDES

Optional Information

Notes
Pre-print.