Published 1999 | Version v1
Miscellaneous

Comparison of SQW and MQW consists of AlGaAs/GaAs working with high power at the 810 nm spectral band

  • 1. Instytut Technologii Elektronowej, Warsaw (Poland)

Description

Accurate numerical simulation of AlGaAs/GaAs SQW SCH and MQW SCH lasers is presented. We discuss the performance of both types of the lasers with regard to high power operation at 810 nm spectral band which is of interest for diode pumped Nd:YAG lasers. Design rules for above mentioned lasers are formulated. From the analysis presented it follows that MQW SCH lasers are better suited for high power applications and exhibit a superior tolerance to both inherent construction parameters variations as well as external operation parameters. (author)

Part of:
Communications of 6. Symposium of Laser Technique

Additional details

Additional titles

Original title (Polish)
Porownanie laserow SQW i MQW z ALGaAs/GaAs w aspekcie pracy z duza moca w pasmie 810 nm
Augmented title (English)
thin film structures

Publishing Information

ISBN
83-87423-38-6
Imprint Title
Communications of 6. Symposium of Laser Technique
Imprint Pagination
461 p.
Journal Page Range
p. 116-122

Conference

Title
6. Symposium of Laser Technique
Original Conference Title
6. Sympozjum Techniki Laserowej
Dates
27 Sep - 1 Oct 1999
Place
Szczecin-Swinoujscie (Poland)

Optional Information

Contract/Grant/Project number
KBN grant no. PBZ-023-10
Notes
12 refs,12 figs Imprint:Komunikaty 6. Sympozjum Techniki Laserowej