Published March 1997
| Version v1
Journal article
Superior radiation-resistant properties of InGaP/GaAs tandem solar cells
- 1. Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)
- 2. Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)
Description
The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa0.5P0.5/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 70
- Journal Issue
- 12
- Journal Page Range
- p. 1566-1568.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28072939
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANNEALING; CHARGE CARRIERS; ELECTRON BEAMS; GALLIUM ARSENIDE SOLAR CELLS; GERMANIUM; INDIUM PHOSPHIDE SOLAR CELLS; MEV RANGE 01-10; RADIATION EFFECTS
- Descriptors DEC
- BEAMS; DIRECT ENERGY CONVERTERS; ELEMENTS; ENERGY RANGE; EQUIPMENT; HEAT TREATMENTS; LEPTON BEAMS; METALS; MEV RANGE; PARTICLE BEAMS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT