Published October 1, 1981
| Version v1
Journal article
Temperature effect on low threshold voltage ion-implanted GaAs MESFETS
Creators
- 1. Rockwell International Corp., Thousand Oaks, CA (USA). Microelectronics Research and Development Center
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Electron. Lett.
- Journal Volume
- 17
- Journal Issue
- 20
- Series
- Electron. Lett.
- Journal Page Range
- 760-761
- ISSN
- 0013-5194
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13647460
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRIC POTENTIAL; GALLIUM ARSENIDES; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-N JUNCTIONS; SEMICONDUCTOR DEVICES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- Brief note.