The investigation of optical and electrical properties of N+-implanted amorphous diamond-like carbon (DLC) films

Optical and electrical properties of diamond-like carbon (DLC) films irradiated by N+ ions with energy 25 keV in the dose range from 3x1014 to 3 x 1017 cm-2 were investigated. It was shown that the dose dependencies of optical and electrical properties of N+-implanted DLC films were different from those for the C+-implanted case in the moderate and high dose ranges due to carbon nitride phase formation. On the basis of dose dependencies three different steps of structural changes of N+-implanted DLC films can be distinguished: transformation of sp3 + sp2 mixture to sp2 and growth of π-clusters; the nucleation of carbon nitride phase and the decrease of π-cluster concentration; the growth of carbon nitride nuclei and the decrease of π-cluster sizes