A susceptor heating structure in MOVPE reactor by induction heating
Creators
- 1. Shandong Provincial Key Laboratory of Network Based Intelligent Computing, School of Information Science and Engineering, University of Jinan, Jinan 250022 (China)
- 2. Shandong College of Electronic Technology, Jinan 250022,China (China)
- 3. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071,China (China)
- 4. School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan 411201 (China)
Description
A novel susceptor with a revolutionary V-shaped slot of solid of revolution form is proposed in the metalorganic vapor phase epitaxy (MOVPE) reactor by induction heating. This slot changes the heat transfer rate as the generated heat is transferred from the high temperature region of the susceptor to the substrate, which improves the uniformity of the substrate temperature distribution. By using finite element method (FEM), the susceptor with this structure for heating the substrate of six inches in diameter is optimized. It is observed that this optimized susceptor with the V-shaped slot makes the uniformity of the substrate temperature distribution improve more than 80%, which can be beneficial to the film growth. - Highlights: •A novel susceptor with V-shaped slot in MOVPE reactor is proposed. •Temperature in the substrate is optimized. •Great temperature uniformity of the substrate is obtained
Availability note (English)
Available from http://dx.doi.org/10.1016/j.applthermaleng.2014.03.066Additional details
Identifiers
- DOI
- 10.1016/j.applthermaleng.2014.03.066;
- PII
- S1359-4311(14)00245-2;
Publishing Information
- Journal Title
- Applied Thermal Engineering
- Journal Volume
- 67
- Journal Issue
- 1-2
- Journal Page Range
- p. 423-428
- ISSN
- 1359-4311
- CODEN
- ATENFT
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46022273
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL GROWTH; FINITE ELEMENT METHOD; HEAT TRANSFER; HEATING; SUBSTRATES; TEMPERATURE DISTRIBUTION; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; VAPOR PHASE EPITAXY
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL GROWTH METHODS; ENERGY TRANSFER; EPITAXY; FILMS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.