Published November 1, 2001
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Temperature dependent 5f-states in URu2Si2
Description
A dramatic temperature dependent enhancement of U 5f spectral weight at EF is observed in angle-resolved photoemission measurements of URu2Si2 at the center of an X-point hole-pocket. Comparison of this temperature dependent behavior for excitation both at and below the U 5d->5f resonant threshold is presented
Availability note (English)
Available from INIS in electronic form; Also available from OSTI as DE00797836; PURL: https://www.osti.gov/servlets/purl/797836-8aFD5H/native/
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Additional details
Identifiers
Publishing Information
- Imprint Pagination
- 5 p.
- Report number
- LBNL--49191
Conference
- Title
- Strongly Correlated Electron Systems, SCES'2001 International Conference
- Dates
- 6-10 Aug 2001
- Place
- Ann Arbor, MI (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 33055487
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ENERGY LEVELS; EXCITATION; INTERMETALLIC COMPOUNDS; PHOTOEMISSION; RUTHENIUM COMPOUNDS; SILICON COMPOUNDS; TEMPERATURE DEPENDENCE; URANIUM COMPOUNDS
- Descriptors DEC
- ACTINIDE COMPOUNDS; ALLOYS; EMISSION; ENERGY-LEVEL TRANSITIONS; REFRACTORY METAL COMPOUNDS; SECONDARY EMISSION; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Contract/Grant/Project number
- B and R KC0204016; AC03-76SF00098
- Funding organization
- USDOE Director, Office of Science. Office of Basic Energy Studies. Materials Science and Engineering Division (United States)