Mirror design for long-wavelength vertical-cavity surface-emitting lasers
Creators
- 1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206 (China)
- 2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)
Description
A kind of bottom mirror, fabricated using a nano-scale epitaxy method, is proposed for long-wavelength InP-based vertical-cavity surface-emitting lasers (VCSELs). The design of the bottom mirror combines the conventional dielectric distributed Bragg reflector structure with a fabrication procedure using nano-scale epitaxial lateral overgrowth (ELO). Hence, this ELO mirror structure can provide both a high reflectivity, to form an optical resonance cavity, and a virtual InP substrate for the growth of high quality active regions in the VCSEL. The dependence of the reflectivity on the epitaxial lateral overgrowth mirror structure parameters is analyzed in detail using numerical methods. The results demonstrate that a stopband at more than 99% reflectivity is achieved in the wavelength range from 1.49 to 2.09 µm, and the threshold optical gain can be as low as 202, 257, and 311 cm−1 for the internal loss coefficients of 10, 15 and 20 cm−1. (letter)
Availability note (English)
Available from http://dx.doi.org/10.1088/1612-202X/aa9307Additional details
Identifiers
Publishing Information
- Journal Title
- Laser Physics Letters (Internet)
- Journal Volume
- 14
- Journal Issue
- 12
- Journal Page Range
- [6 p.]
- ISSN
- 1612-202X
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52028056
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BRAGG REFLECTION; CAVITY RESONATORS; DESIGN; DIELECTRIC MATERIALS; EPITAXY; GAIN; INDIUM PHOSPHIDES; LASERS; MIRRORS; NANOSTRUCTURES; REFLECTIVITY; SUBSTRATES; SURFACES; WAVELENGTHS
- Descriptors DEC
- AMPLIFICATION; CRYSTAL GROWTH METHODS; ELECTRONIC EQUIPMENT; EQUIPMENT; INDIUM COMPOUNDS; MATERIALS; OPTICAL PROPERTIES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFLECTION; RESONATORS; SURFACE PROPERTIES