Published August 2006
| Version v1
Journal article
Ion beam analyses and electrical characterization of substitutional Fe properties in Fe implanted InP
Creators
- 1. Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy)
- 2. Dipartimento di Fisica, Universita di Bologna, viale Berti Pichat 6/2, 40127 Bologna (Italy)
- 3. MATIS-INFM and Dipartimento di Fisica, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy)
Description
We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2006.03.158;
- PII
- S0168-583X(06)00431-9;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 249
- Journal Issue
- 1-2
- Journal Page Range
- p. 894-896
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 17. international conference on ion beam analysis
- Dates
- 26 Jun - 1 Jul 2005
- Place
- Sevilla (Spain)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38038318
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CHANNELING; CRYSTALS; CURRENTS; DAMAGE; DENSITY; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; INDIUM PHOSPHIDES; ION BEAMS; ION IMPLANTATION; IRON; PIXE ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SIMULATION; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- BEAMS; CHEMICAL ANALYSIS; ELEMENTS; HEAT TREATMENTS; INDIUM COMPOUNDS; METALS; NONDESTRUCTIVE ANALYSIS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENTS; X-RAY EMISSION ANALYSIS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.