Published June 2005
| Version v1
Journal article
VUV reflectance measurements and optical constants of SiC thin films
- 1. INFM-LUXOR-DEI-Universita di Padova, Via Gradenigo 6/B, 35131 Padova (Italy)
- 2. Laboratori Nazionali Legnaro INFN (Italy)
Description
Optical constants of SiC thin films deposited with RF magnetron sputtering have been derived in the VUV. The films have been deposited with different parameters resulting in various C/Si ratios. Reflectance measurements have been made with a dedicated facility in the range 300-1300 A. Index of refraction and absorption coefficient have been derived by fitting the reflectance data with the calculated ones
Additional details
Identifiers
- DOI
- 10.1016/j.elspec.2005.01.248;
- PII
- S0368-2048(05)00190-8;
Publishing Information
- Journal Title
- Journal of Electron Spectroscopy and Related Phenomena
- Journal Volume
- 144-147
- Journal Page Range
- p. 987-992
- ISSN
- 0368-2048
- CODEN
- JESRAW
Conference
- Title
- 14. international conference on vacuum ultraviolet radiation physics
- Acronym
- VUV 14
- Dates
- 19-23 Jul 2004
- Place
- Cairns (Australia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37039915
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; CARBON; COATINGS; FAR ULTRAVIOLET RADIATION; REFRACTIVE INDEX; SILICON; SILICON CARBIDES; SPUTTERING; THIN FILMS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; NONMETALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SORPTION; ULTRAVIOLET RADIATION
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.