Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure
Creators
- 1. Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543 (Singapore)
- 2. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 (Singapore)
Description
Highlights: • An asymmetric Fabry−Perot cavity composed of WSe2/MoS2/h-BN/Au/SiO2 hybrid structure is realized by dry transfer technique. • Enhancement of Raman and absorption intensity are achieved from individual MoS2 and WSe2 by modulating the thickness of h-BN. • Integrating asymmetric Fabry−Perot cavity into WSe2/MoS2 vdWH results in excellent photodiode and photovoltaic performance. -- Abstract: Despite monolayer transition metal dichalcogenide (TMD) shows a direct band gap property, its atomic thickness causes poor light absorption that severely limits its practical applications. For improving the optical gain of TMD, however, many approaches were proposed such as complicated fabrication process that compromises the stability and reliability of two-dimensional (2D) materials, which further limits the device scalability. In this work, a simple method is reported to engineer the light-matter interactions in few-layer molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) via an asymmetric Fabry-Perot cavity (FPc). The cavity is based on the hybrid integration of TMD/hexagonal boron nitride (h-BN)/Au/SiO2 heterostructure realized through layer-by-layer stacking. By modulating the underlying h-BN thickness, constructive resonant absorption can be achieved by multiple internal reflections, which significantly increases the Raman and optical absorption of MoS2 and WSe2. Leveraging on the enhanced light-matter interactions, we further integrate this asymmetric Fabry−Perot cavity into WSe2/MoS2 van der Waals heterostructure (vdWH) to realize high performance photodiode and photovoltaic devices, leading to a ~5 folds increase in photodiode responsivity and a peak external quantum efficiency (EQE) of 7.5%. This work demonstrates an effective way towards hybrid integration of Fabry-Perot cavity with 2D materials, which could offer a potential pathway for enabling novel optoelectronic devices, such as 2D light-emitting diodes (LEDs) and solar cells.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nanoen.2019.05.090Additional details
Identifiers
- DOI
- 10.1016/j.nanoen.2019.05.090;
- PII
- S2211285519305026;
Publishing Information
- Journal Title
- Nano Energy (Print)
- Journal Volume
- 62
- Journal Page Range
- p. 667-673
- ISSN
- 2211-2855
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54114965
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; ASYMMETRY; BORON; BORON NITRIDES; LIGHT EMITTING DIODES; MATERIALS; MOLYBDENUM SULFIDES; OPTOELECTRONIC DEVICES; PERFORMANCE; PHOTODIODES; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; SILICA; SILICON OXIDES; SOLAR CELLS; THICKNESS; TUNGSTEN; TWO-DIMENSIONAL SYSTEMS; VAN DER WAALS FORCES
- Descriptors DEC
- BORON COMPOUNDS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIMENSIONS; DIRECT ENERGY CONVERTERS; EFFICIENCY; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; MINERALS; MOLYBDENUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OPTICAL EQUIPMENT; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC CELLS; PNICTIDES; REFRACTORY METAL COMPOUNDS; REFRACTORY METALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SILICON COMPOUNDS; SOLAR EQUIPMENT; SORPTION; SULFIDES; SULFUR COMPOUNDS; TRANSDUCERS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier Ltd. All rights reserved.