Published January 2013 | Version v1
Journal article Metadata-only

Fabrication of Thin Graphene Layers on a Stacked 6H-SiC Surface in a Graphite Enclosure

Creators

  • 1. School of Technical Physics, Xidian University, Xi'an 710071 (China)
  • 2. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)
  • 3. School of Microelectronics, Xidian University, Xi'an 710071 (China)

Description

Thin and homogeneous epitaxial graphene (EG) layers on a 6H-SiC (0001-bar) substrate are fabricated and they cover the whole substrate (10 × 10 mm2). The sample surface is capped by another 6H-SiC (0001-bar) wafer in a graphite enclosure to form a relatively high Si partial pressure between them, which significantly reduces the extremely high growth rate of EG. The structure and morphology of the EG layers are investigated by Raman spectroscopy, atomic force microscopy and field-emission scanning electronic microscopy. The results are compared with an uncapped sample surface, and reveal the obvious existence of ridges on the surface of the EG, and show that capping is indeed beneficial to obtain homogeneous graphene

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/30/1/018101

Additional details

Identifiers

DOI
10.1088/0256-307X/30/1/018101;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
30
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45003396
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; EPITAXY; FABRICATION; FIELD EMISSION; GRAPHENE; GRAPHITE; LAYERS; MORPHOLOGY; PARTIAL PRESSURE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; SUBSTRATES; SURFACES
Descriptors DEC
CARBIDES; CARBON; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; EVALUATION; LASER SPECTROSCOPY; MICROSCOPY; MINERALS; NONMETALS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SPECTROSCOPY; THERMODYNAMIC PROPERTIES