Published April 1, 2018 | Version v1
Journal article Metadata-only

Theoretical treatment of the processes involving the dipole transitions to the lowest exciton states in hexagonal semiconductors

Creators

  • 1. Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilov St. 38, 119991, Moscow (Russian Federation)

Description

The treatment of the two-photon transitions to the An=1 exciton level and the resonant Raman scattering of light by LO-phonons is given for the hexagonal semiconductors A2B6, taking into account the influence of the complex top valence band and anisotropy of the exciton effective mass. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/999/1/012003

Additional details

Identifiers

DOI
10.1088/1742-6596/999/1/012003;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
999
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
26. Annual International Laser Physics Workshop
Acronym
LPHYS'17
Dates
17-21 Jul 2017
Place
Kazan (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52082626
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANISOTROPY; DIPOLES; EFFECTIVE MASS; EXCITONS; LIGHT SCATTERING; PHONONS; PHOTONS; RAMAN EFFECT; SEMICONDUCTOR MATERIALS; VALENCE
Descriptors DEC
BOSONS; ELEMENTARY PARTICLES; MASS; MASSLESS PARTICLES; MATERIALS; MULTIPOLES; QUASI PARTICLES; SCATTERING