Nucleation and growth characterization by field-ion microscopy

Field-ion microscopy affords atomic resolution and thus is ideally suited for studies involving the nucleation and growth of overlayers on the conical field-emission end forms. The added capability of filed-assisted removal of atomic layers gives this technique a unique three-dimensional capability which is invaluable for the controlled removal of atomic layers and delineation of the depth information. The description of the transition from overlayer to substrate is afforded by a change in the ratio of best image to field evaporation voltages (BIV/FEV). Since the adatom layers are necessarily quite thin (>20 nm) a careful characterization in an SEM and the associated energy dispersive x-ray analysis (EDAX) is certainly worthwhile. The modes of deposition utilized in the studies to be presented include in-situ vapor deposition, electroless (cementation) and electrodeposition of metallic and oxide overgrowths. In-situ vapor deposition allows for imaging-coating-reimaging practice without the introduction of artifacts on these small substrate surfaces quite prone to air of humidity induced etching and alteration. Vapor deposition thus affords the only means of full recovery of the imaging surface at thin coverages. The extent of the coverage can be increased by in-situ tip heating and through reduced misfit between the two species of concern. Although electrolytic or electroless depositions afford much thicker overgrowths, the contact of the field-emission end form with an aqueous medium results in a chemical dissolution that increases with the increasing pH of the solution. The recovered surface is a new surface generated through this etching but still containing the imaging features of the substrate and thus is quite easy to distinguish