Published 2000 | Version v1
Journal article Metadata-only

Development and application of Darwin X-ray diffraction theory for structure and chemical composition determination in multilayered crystals

Creators

  • 1. Instytut Technologii Materialoe Elektronicznych, Warsaw (Poland)

Description

The method of investigation of the chemical composition for quaternary heterostructures has been developed. To this end X-ray high resolution diffractometry and RBS methods were applied. This method consists in finding a best fit between experimental diffraction pattern and theoretical one calculated, employing Darwin dynamical diffraction theory for a given model of heterostructure. This procedure was applied to determine the chemical profile in the growth direction for InGaAsP/InP superlattices that were grown by MOCVD technology on 001 InP substrate. The relations between the chemical composition of InxGa1-xAsyP1-y layer, its lattice parameter, optoelectronic properties and growth conditions were found. (author)

Additional details

Additional titles

Original title (Polish)
Rozwiniecie i zastosowanie darwinowskiej teorii dyfrakcji promieni rentgenowskich do okreslania struktury i skladu chemicznego krysztalow wielowarstwowych

Publishing Information

Journal Title
Materialy Elektroniczne
Journal Volume
28
Journal Issue
3
Journal Page Range
p. 20-49
ISSN
0209-0058

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33001600
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALGORITHMS; ARSENIDES; CHEMICAL COMPOSITION; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LATTICE PARAMETERS; LAYERS; MANUFACTURING; PHOSPHIDES; RUTHERFORD SCATTERING; SEMICONDUCTOR MATERIALS; SUBSTRATES; SUPERLATTICES; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELASTIC SCATTERING; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SURFACE COATING

Optional Information

Contract/Grant/Project number
KBN grant no. 9T10C 017 16
Notes
14 refs, 9 figs, 2 tabs