Published September 1980
| Version v1
Journal article
Preparation, electric and photoelectric properties of tantalate and niobate of silver
- 1. Rostovskij-na-Donu Gosudarstvennyj Univ. (USSR). Nauchno-Issledovatel'skij Inst. Fiziki
Description
By the method of hot pressing obtained are highly dense polycrystalline AgNbO3 and AgTaO3 specimens, which do not contain free Ag. AgTaO3 is a paraelectric at the temperatures above -190 deg C. The synthesized compounds are wide-range hole semiconductors with essential photosensitivity. AgNbO3 electroconductivity is impure within 20-600 deg C range, while in AgTaO3 a transition to intrinsic conduction takes place above 350 deg C
Additional details
Additional titles
- Original title (Russian)
- Poluchenie, ehlektricheskie i fotoehlektricheskie svojstva niobata i tantalata serebra
Publishing Information
- Journal Title
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Volume
- 16
- Journal Issue
- 9
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 1618-1622
- ISSN
- 0002-337X
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 12583980
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CHEMICAL PREPARATION; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE; MEDIUM TEMPERATURE; NIOBATES; PHOTOSENSITIVITY; SEMICONDUCTOR MATERIALS; SILVER COMPOUNDS; TANTALATES
- Descriptors DEC
- ELECTRICAL PROPERTIES; NIOBIUM COMPOUNDS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SENSITIVITY; SYNTHESIS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Inorganic Materials (USA).