Published October 2009
| Version v1
Journal article
Thermally induced defects in silicon irradiated with fast neutrons
Creators
- 1. Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)
- 2. Institute of Electronic Materials Technology, 01-919 Warsaw (Poland)
- 3. Institute of Atomic Energy, 05-400 Otwock-Swierk (Poland)
- 4. Institute of Physics, PAS, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
- 5. University of Athens, Athens 15784 (Greece)
- 6. HASYLAB at DESY, D-22603 Hamburg (Germany)
Description
Defect structure of Czochralski grown (1 1 1) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy 5 MeV, dose 5x1016 cm-2) and annealed at up to 1400 K, also under hydrostatic Ar pressure equal to 1.1 GPa, has been investigated by high-resolution X-ray diffraction and synchrotron topography at HASY Laboratory. The annealing, especially at 1270 and 1400 K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures-pressures in neutron-irradiated Cz-Si reveals the irradiation-related history of investigated samples.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.radphyschem.2009.03.087Additional details
Identifiers
- DOI
- 10.1016/j.radphyschem.2009.03.087;
- PII
- S0969-806X(09)00236-9;
Publishing Information
- Journal Title
- Radiation Physics and Chemistry
- Journal Volume
- 78
- Journal Issue
- 10
- Journal Page Range
- p. S67-S70
- ISSN
- 0969-806X
- CODEN
- RPCHDM
Conference
- Title
- Workshop on use of Monte Carlo techniques for design and analysis of radiation detectors
- Dates
- 15-17 Sep 2006
- Place
- Coimbra (Portugal)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41020773
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; FAST NEUTRONS; IRRADIATION; MEV RANGE 01-10; MONOCRYSTALS; PRECIPITATION; PRESSURE RANGE GIGA PA; SILICON; TEMPERATURE RANGE 1000-4000 K; X-RAY DIFFRACTION
- Descriptors DEC
- BARYONS; COHERENT SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; MEV RANGE; NEUTRONS; NUCLEONS; PRESSURE RANGE; SCATTERING; SEMIMETALS; SEPARATION PROCESSES; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.