Published August 2023 | Version v1
Journal article

Spintronic state-induced interface reconfiguration of 2H-perovskite related oxides for pseudocapacitance increase

  • 1. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 (China)
  • 2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou, 510275 (China)
  • 3. Laboratory of Clean Energy Chemistry and Materials, State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

Description

Perovskite oxides are able to realize pseudocapacitive energy storage through oxygen anion intercalation. Herein, it is demonstrated that, based on the three 2H-perovskite related oxides Sr6Co5O15x, Sr5Co4O12x, and Sr5Co3NiO12x as the research objects, metal oxyhydroxides generated through surface reconfiguration during electrochemical processes can contribute extra capacity besides the oxygen-anion intercalation. This is because the electron spin state controlled by the transition metal valence state in the pseudo trigonal prisms for the 2H-perovskite structure will affect the Jahn-Teller (JT) distortion. The strong JT distortion of Co2+ and Ni3+ would elongate metal-O bonds, thereby helping the formation of metal oxyhydroxides on the surface of the pristine material. Among the three 2H-perovskite related oxides, the specific capacity of Sr5Co3NiO12x having the most Co2+ and Ni3+ contents showed the highest capacity increase. This study will provide a promising pathway to develop advanced perovskite-like oxide pseudocapacitive materials. (© 2023 Wiley-VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/adfm.202302272

Additional details

Identifiers

Publishing Information

Journal Title
Advanced Functional Materials (Internet)
Journal Volume
33
Journal Issue
34
Journal Page Range
p. 1-9
ISSN
1616-3028
CODEN
AFMDC6

Optional Information

Notes
AID: 2302272