Published November 2001 | Version v1
Journal article Metadata-only

Investigation on the strain of SiGe/Si heteroepitaxial system during high temperature annealing by RBS/channeling

Creators

  • 1. Academia Sinica, Shanghai (China). Shanghai Inst. of Nuclear Research, Laboratory of Nuclear Analyses and Techniques
  • 2. Kungliga Tekniska Hoegskolan, Department of Electronics (Sweden)

Description

The influence of the high temperature processing on the strain stored in SiGe hetero-epilayer was studied by means of RBS/Channeling. Channeling angular scan along the <110> axial direction in the (100) plane was used to characterize the tetragonal distortion in the SiGe strained layer. The strained crystal structure parameters were acquired by combining the determination of strain with the elasticity theory. It is shown that the strain stored in the SiGe epilayer has significantly change (relaxation factor from 0.023 to 0.84) after high temperature annealing. The potential strain relaxation mechanisms were discussed

Additional details

Publishing Information

Journal Title
Nuclear Science and Techniques
Journal Volume
12
Journal Issue
4
Journal Page Range
p. 295-301
ISSN
1001-8042

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
33024875
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; BACKSCATTERING; CHANNELING; CRYSTAL STRUCTURE; EPITAXY; GERMANIUM ALLOYS; INTERMETALLIC COMPOUNDS; MORPHOLOGY; RUTHERFORD SCATTERING; SILICON; SILICON ALLOYS; STRAINS; STRESS RELAXATION
Descriptors DEC
ALLOYS; CRYSTAL GROWTH METHODS; ELASTIC SCATTERING; ELEMENTS; HEAT TREATMENTS; RELAXATION; SCATTERING; SEMIMETALS