Published 1993
| Version v1
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Generation of single failures in memory devices irradiated by 1 GeV protons
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Description
Cross sections of single reversible failures in the logic state of memory cells irradiated with 1 GeV energy protons are measured. It is found that the failure cross section does not depend on the beam intensity on the absorbed dose and on the source logic state of the memory cells
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28076652.pdf
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Additional details
Additional titles
- Original title (Russian)
- Генерация единичных сбоев в устройствах памяти, облучаемых протонами с энергией 1 GehV
Publishing Information
- Publisher
- TsNII upravleniya ehkonomiki i informatsii.
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Problems of nuclear science and technology. Scientific-technical collection
- Imprint Pagination
- 139 p.
- Journal Issue
- no.2-3
- Series
- Fizika radiatsionnogo vozdejstviya na radioehlektronnuyu apparaturu.
- Journal Page Range
- p. 95-99.
- Report number
- INIS-RU--430
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28076652
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- MICROELECTRONIC CIRCUITS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; SYSTEM FAILURE ANALYSIS
- Descriptors DEC
- ELECTRONIC CIRCUITS; MEMORY DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SYSTEMS ANALYSIS
Optional Information
- Notes
- Imprint:Voprosy atomnoj nauki i tekhniki. Nauchno-tekhnicheskij sbornik.