Investigation of CVD graphene topography and surface electrical properties
Creators
- 1. National Physical Laboratory, Teddington TW11 0LW (United Kingdom)
- 2. London Centre for Nanotechnology, University College London WC1H 0AH (United Kingdom)
- 3. Department of Materials, Imperial College London SW7 2AZ (United Kingdom)
- 4. Graphenea S.A.,Tolosa Hiribidea, 76 E-20018 Donostia, San Sebastian (Spain)
Description
Combining scanning probe microscopy techniques to characterize samples of graphene, a selfsupporting, single atomic layer hexagonal lattice of carbon atoms, provides far more information than a single technique can. Here we focus on graphene grown by chemical vapour deposition (CVD), grown by passing carbon containing gas over heated copper, which catalyses single atomic layer growth of graphene on its surface. To be useful for applications the graphene must be transferred onto other substrates. Following transfer it is important to characterize the CVD graphene. We combine atomic force microscopy (AFM) and scanning Kelvin probe microscopy (SKPM) to reveal several properties of the transferred film. AFM alone provides topographic information, showing 'wrinkles' where the transfer provided incomplete substrate attachment. SKPM measures the surface potential indicating regions with different electronic properties for example graphene layer number. By combining AFM and SKPM local defects and impurities can also be observed. Finally, Raman spectroscopy can confirm the structural properties of the graphene films, such as the number of layers and level of disorder, by observing the peaks present. We report example data on a number of CVD samples from different sources. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2051-672X/4/2/025001Additional details
Identifiers
Publishing Information
- Journal Title
- Surface Topography (Online)
- Journal Volume
- 4
- Journal Issue
- 2
- Journal Page Range
- [5 p.]
- ISSN
- 2051-672X
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47070177
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRICAL PROPERTIES; FILMS; GRAPHENE; HEXAGONAL LATTICES; IMPURITIES; LAYERS; PEAKS; PROBES; RAMAN SPECTROSCOPY; SUBSTRATES; SURFACE POTENTIAL; SURFACES; TOPOGRAPHY
- Descriptors DEC
- CARBON; CHEMICAL COATING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DEPOSITION; ELEMENTS; LASER SPECTROSCOPY; METALS; MICROSCOPY; NONMETALS; PHYSICAL PROPERTIES; POTENTIALS; SPECTROSCOPY; SURFACE COATING; THREE-DIMENSIONAL LATTICES; TRANSITION ELEMENTS