Published 1980
| Version v1
Journal article
Laser annealing of semiconductors
Creators
- 1. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verh. Dtsch. Phys. Ges.
- Journal Issue
- no.3
- Series
- Verh. Dtsch. Phys. Ges.
Conference
- Title
- Spring meeting Freudenstadt '80 of the Arbeitskreis Festkoerperphysik of the DPG.
- Dates
- 24 - 28 Mar 1980.
- Place
- Freudenstadt, Germany, F.R.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 11542428
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CRYSTAL GROWTH; LASER RADIATION; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; REVIEWS
- Descriptors DEC
- CRYSTALS; DOCUMENT TYPES; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; RADIATION EFFECTS; RADIATIONS
Optional Information
- Notes
- Short communication only.