Published September 2022 | Version v1
Journal article

Fluorinated interfaces for efficient and stable low-temperature carbon-based CsPbI2Br perovskite solar cells

  • 1. The Institute of Technological Sciences, Wuhan University, Wuhan, 430072 (China)
  • 2. School of Physics and Technology, Wuhan University, Wuhan, 430072 (China)
  • 3. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan, 430062 (China)
  • 4. Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006 (China)
  • 5. Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 (China)

Description

Carbon-based inorganic perovskite solar cells (C-PSCs) have attracted intensive attention owing to their low cost and superior thermal stability. However, the bulk defects in perovskites and interfacial energy level mismatch seriously undermine their performance. To overcome these issues, a multifunctional dual-interface engineering is proposed with a focus on low-temperature CsPbI2Br C-PSCs, where the potassium trifluoroacetate (KTFA) and the 4-trifluorophenyl methylammonium bromide (CF3PMABr) are introduced beneath and on top of the perovskite layer, respectively. It is found that TFA ions locate at the SnO2/CsPbI2Br interface, whereas a small amount of K+ ions diffuse into perovskite lattice to participate in nucleation and crystallization, resulting in more favored interfacial energy level alignment, improved film quality, passivated interfacial defects, released interfacial strain, as well as suppressed charge recombination and ion migration. Meanwhile, the CF3PMABr passivates I/Br vacancies and forms 2D perovskite capping layer to facilitate hole extraction at the CsPbI2Br/carbon interface. As a result, a remarkable power conversion efficiency (PCE) of 14.05% with an open-circuit voltage of 1.273 V is achieved. To the best of the authors' knowledge, it is currently the highest PCE reported for low-temperature CsPbI2Br C-PSCs. Furthermore, the nonencapsulated device exhibits improved moisture, thermal, and illumination stability in ambient air. (© 2022 Wiley‐VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/adfm.202205478

Additional details

Identifiers

Publishing Information

Journal Title
Advanced Functional Materials (Internet)
Journal Volume
32
Journal Issue
38
Journal Page Range
p. 1-10
ISSN
1616-3028
CODEN
AFMDC6

Optional Information

Notes
AID: 2205478