Published September 23, 2011 | Version v1
Journal article

Validation of nuclear reaction models relevant to cosmic-ray neutron induced single-event effects in microelectronics

  • 1. Department of Advanced Energy Engineering Science, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)
  • 2. Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8571 (Japan)
  • 3. Semiconductor Technology Academic Research Center, STARC, Kanagawa 222-0033 (Japan)

Description

The accuracy of nuclear reaction models used in the PHITS (Particle and Heavy Ion Transport code System) code, i.e., the INC model, the QMD model and the event generator mode (e-mode) with the evaluated nuclear data library JENDL-3.3 are validated to apply it to the simulations on single-event effects in advanced microelectronic devices. The model calculations are compared with available experimental data of light-ion production (i.e., proton and alpha particle) from neutron-induced reactions on natSi and 16O, which are the major constituent elements of silicon semiconductor devices over the wide energy range. Comparisons of calculated and measured data for light-ion production indicate that the e-mode calculation with JENDL-3.3 provides better agreement with the experimental data below 20 MeV, and the QMD model reproduces them reasonably well at energies larger than 20 MeV.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/312/6/062004

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
312
Journal Issue
6
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
International nuclear physics conference 2010
Acronym
INPC2010
Dates
4-9 Jul 2010
Place
Vancouver, BC (Canada)