Published May 3, 2010 | Version v1
Journal article

Electronic transport behavior of diameter-graded Ag nanowires

  • 1. Tianjin Key Lab for Photoelectric Materials and Devices, Tianjin 300384 (China)
  • 2. School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China)
  • 3. Key Laboratory of Display Materials and Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin 300384 (China)

Description

Ag nanowires with a graded diameter in anodic aluminum oxide (AAO) membranes were fabricated by the direct-current electrodeposition. The Ag nanowires have a graded-change in diameter from 8 to 32 nm, which is matched with the graded-change of the AAO pore diameter. Electronic transport measurements show that there is a transport behavior similar to that of a metal-semiconductor junction along the axial direction in the diameter-graded Ag nanowires. Such a novel homogeneous nanojunction will be of great fundamental and practical significance.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2010.03.044

Additional details

Identifiers

DOI
10.1016/j.physleta.2010.03.044;
PII
S0375-9601(10)00368-3;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
374
Journal Issue
22
Journal Page Range
p. 2267-2269
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.