Diffusion-Controlled growth of Ge nanocrystals in SiO₂ films under conditions of ion synthesis at high pressure

The growth of Ge nanocrystals in SiO₂ films is studied in relation to the dose of implanted Ge⁺ ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences of the nanocrystal dimensions on the content of Ge atoms and the annealing time are described by the corresponding root functions. The nanocrystal radius squared is an exponential function of the inverse temperature. The dependences correspond to the model of the diffusion-controlled mechanism of nanocrystal growth. From the temperature dependence of the nanocrystal dimensions, the diffusion coefficient of Ge in SiO₂ at a pressure of 12 kbar is determined: D = 1.1 × 10^–10 exp(–1.43/kT). An increase in the diffusion coefficient of Ge under pressure is attributed to the change in the activation volume of the formation and migration of point defects. Evidence in favor of the interstitial mechanism of the diffusion of Ge atoms to nanocrystal nuclei in SiO₂ is reported.