Published October 2015 | Version v1
Journal article

Enhancement of polycrystalline silicon solar cells efficiency using indium nitride particles

  • 1. Institute of Materials Science and Nanotechnology (UNAM), Bilkent University, Ankara, 06800 (Turkey)
  • 2. Institute Center for Future Energy Systems (iFES), Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology, 54224, Abu Dhabi (United Arab Emirates)
  • 3. Department of Physics, Marmara University, 34722, Istanbul (Turkey)
  • 4. Department of Physics, Georgia State University, 3965, Atlanta (United States)
  • 5. Physics Engineering Department, Istanbul Technical University, 34469, Istanbul (Turkey)
  • 6. Department of Electrical and Electronics Engineering, Bilkent University, Ankara, 06800 (Turkey)

Description

In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300–1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2040-8978/17/10/105903

Additional details

Publishing Information

Journal Title
Journal of Optics (Online)
Journal Volume
17
Journal Issue
10
Journal Page Range
[6 p.]
ISSN
2040-8986