Published 2006
| Version v1
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Working parameters and time of life for planar silicons detectors
- 1. NNTs KhFTI, Khar'kov (Ukraine)
Description
no abstract available
Files
38008053.pdf
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Additional details
Additional titles
- Original title (Russian)
- Рабочие характеристики и время жизни планарных кремниевых детекторов
Publishing Information
- Imprint Title
- Theses of reports 'IV Conference of high energy physics, nuclear physics and accelerators'
- Imprint Pagination
- 96 p.
- Journal Page Range
- p. 91-92
- Report number
- INIS-UA--102
Conference
- Title
- 4. Conference of high energy physics, nuclear physics and accelerators
- Original Conference Title
- 4. Konferentsiya po fizike vysokikh ehnergij, yadernoj fizike i uskoritelyam
- Dates
- 27 Feb - 3 Mar 2006
- Place
- Khar'kov (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 38008053
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- PERFORMANCE; SI SEMICONDUCTOR DETECTORS; TEMPERATURE DEPENDENCE; TESTING
- Descriptors DEC
- MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS
Optional Information
- Notes
- Imprint:Tezisy dokladov 4 Konferentsii po fizike vysokikh ehnergij, yadernoj fizike i uskoritelyam