Published February 1983
| Version v1
Journal article
Doped semiconductors and semiconductor devices as model systems for fundamental condensed matter physics
Description
Doped semiconductors and semiconductor devices are discussed with emphasis on fundamental physical phenomena. It is argued that such systems are ideal model systems for condensed matter physics in general. This view point is illustrated by a few examples such as the amorphous antiferromagnetism associated with non-metallic Si:P and effects of weak localisation in metallic Si:P and a GaAs field effect transistor. (author)
Abstract (Portuguese)
Semicondutores dopados e dispositivos semicondutores sao discutidos com enfase nos fenomenos de fisica fundamental. Discute-se, em geral, porque tais sistemas sao modelos ideais para a fisica da materia condensada. Este ponto de vista e ilustrado por alguns exemplos tais como: antiferromagnetismo amorfo associado a silicio:P nao metalico e efeitos fracos de localizacao em silicio:P metalico e transistor GaAs de efeito de campo. (A.C.A.S.)Additional details
Publishing Information
- Journal Title
- Revista Brasileira de Fisica
- Journal Volume
- 13
- Journal Issue
- special issue
- Series
- Rev. Bras. Fis.
- Journal Page Range
- 221-245
- ISSN
- 0374-4922
- CODEN
- RBFSA
Conference
- Title
- 1. Brazilian School on Semiconductor Physics.
- Dates
- 31 Jan - 11 Feb 1983.
- Place
- Campinas, SP (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 21088574
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIFERROMAGNETISM; DOPED MATERIALS; SEMICONDUCTOR DEVICES; SILICON
- Descriptors DEC
- ELEMENTS; MAGNETISM; MATERIALS; SEMIMETALS